 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : * For general purpose applications * Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. * Pb / RoHS Free SCHOTTKY BARRIER DIODES DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. 0.020 (0.52)max. 1.00 (25.4) min. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Repetitive Peak Reverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 s Square Wave Thermal Resistance Junction to Ambient Air Junction Temperature Storage temperature range 1N5711 1N6263 25 C ambient temperature unless otherwise specified. Symbol VRRM PD IFSM RJA TJ TS Value 70 60 400(1) 2 0.3(1) 125(1) -55 to + 150 (1) Unit V mW A C/mW C C Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Current Forward Voltage Drop Diode Capacitance Reverse Recovery Time Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.. Symbol 1N5711 1N6263 V(BR)R IR VF 1N5711 1N6263 Cd Trr Test Condition IR = 10 A VR = 50 V IF = 1mA IF = 15mA VR = 0 V, f = 1MHz IF = IR = 5mA, recover to 0.1IR Min 70 60 - Typ - Max 200 0.41 1.0 2.0 2.2 1 Unit V nA V pF ns Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( 1N5711 and 1N6263 ) Typical variation of forward current and forward voltage for primary conduction through the schottky barrier 10 5 Forward Current , IF (mA) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 Forward Voltage , VF (V) 1 0 0 0.5 Forward Voltage , VF (V) 1 Forward Current , IF (mA) 80 100 Typical forward conduction curve of combination schottky barrier and PN junction guard ring 60 40 20 Typical capacitance curve as a function of reverse voltage Typical variation of reverse current at various temperatures 2 Tj = 25C 100 50 20 Reverse Current , IR (A) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 Ta = 125C Capacitance , Cd (pF) 1 Ta = 25C 0 0 10 20 30 40 50 Reverse Voltage , VR (V) 0.01 0 10 20 30 40 50 Reverse Voltage , VR (V) Page 2 of 2 Rev. 02 : March 24, 2005 |
Price & Availability of 1N5711
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |